Reballing Station BGA Rework Repair
1. Rework motherboard reballing BGA IC chips. 2. Price $3000-6000. 3. Lead time within 3-7 business days. 4. Shipped by sea or by air(DHL, Fedex, TNT)
Automatic Optical Reballing Station BGA Rework Repair
1.Application Of Automatic Optical Reballing Station BGA Rework Repair
Work with all kinds of motherboards or PCBA.
Solder, reball, desoldering different kind of chips: BGA,PGA,POP,BQFP,QFN,SOT223,PLCC,TQFP,TDFN,TSOP, PBGA,CPGA,LED chip.
2.Product Features of Automatic Optical Reballing Station BGA Rework Repair
3.Specification of Automatic Reballing Station BGA Rework Repair
4.Details of Automatic Optical Reballing Station BGA Rework Repair
5.Why Choose Our Automatic Reballing Station BGA Rework Repair?
6.Certificate of Automatic Reballing Station BGA Rework Repair
UL, E-MARK, CCC, FCC, CE ROHS certificates. Meanwhile, to improve and perfect the quality system, Dinghua has passed ISO, GMP, FCCA, C-TPAT on-site audit certification.
7.Packing & Shipment of Automatic Reballing Station BGA Rework Repair
8.Shipment for Automatic Reballing Station BGA Rework Repair
DHL/TNT/FEDEX. If you want other shipping term, please tell us. We will support you.
9. Terms of Payment
Bank transfer, Western Union, Credit Card.
Please tell us if you need other support.
10. How DH-A2 Reballing Station BGA Rework Repair work?
11. Related knowledge
About flash chip
The flash memory we often say is just a general term. It is a common name for non-volatile random access memory (NVRAM). It is characterized by the fact that the data does not disappear after power-off, so it can be used as an external memory.
The so-called memory is volatile memory, divided into two major categories of DRAM and SRAM, which is often referred to as DRAM, which is known as DDR, DDR2, SDR, EDO, and so on.
There are also different types of flash memory, which are mainly divided into two categories: NOR type and NAND type.
NOR type and NAND type flash memory are very different. For example, NOR type flash memory is more like memory, has independent address line and data line, but the price is more expensive, the capacity is smaller; and NAND type is more like hard disk, address line And the data line is a shared I/O line. All information like a hard disk is transmitted through a hard disk line, and the NAND type has a lower cost and a much larger capacity than the NOR type flash memory. Therefore, NOR flash memory is more suitable for frequent random read and write occasions, usually used to store program code and run directly in flash memory. Mobile phones are large users of NOR flash memory, so the "memory" capacity of mobile phones is usually small; NAND flash memory Mainly used to store data, our commonly used flash memory products, such as flash drives and digital memory cards, use NAND flash memory.
Here we also need to correct a concept, that is, the speed of flash memory is actually very limited, its own operation speed, frequency is much lower than the memory, and NAND-type flash memory-like hard disk operation mode is also much slower than the direct access method of memory. . Therefore, do not think that the performance bottleneck of the flash drive is on the interface, and even take it for granted that the flash drive will have a huge performance improvement after adopting the USB2.0 interface.
As mentioned earlier, the operation mode of NAND-type flash memory is inefficient, which is related to its architecture design and interface design. It operates quite like a hard disk (in fact, NAND-type flash memory is designed with compatibility with hard disk at the beginning). The performance characteristics are also very similar to hard disks: small blocks operate very slowly, while big blocks are fast, and the difference is much larger than other storage media. This performance characteristic is very worthy of our attention.
The basic storage unit of the memory and NOR type flash memory is bit, and the user can randomly access information of any bit. The basic storage unit of the NAND flash memory is a page (it can be seen that the page of the NAND flash memory is similar to the sector of the hard disk, and one sector of the hard disk is also 512 bytes). The effective capacity of each page is a multiple of 512 bytes. The so-called effective capacity refers to the part used for data storage, and actually adds 16 bytes of parity information, so we can see the "(512+16) Byte" representation in the flash manufacturer's technical data. . The majority of NAND-type flash memories with capacities below 2Gb are (512+16) bytes of page capacity, and NAND-type flash memories with capacities of more than 2Gb expand the page capacity to (2048+64) bytes.
The NAND type flash memory performs an erase operation in units of blocks. The write operation of the flash memory must be performed in a blank area. If the target area already has data, it must be erased and then written, so the erase operation is the basic operation of the flash memory. Generally, each block contains 32 512-byte pages with a capacity of 16 KB. When the large-capacity flash memory uses 2 KB pages, each block contains 64 pages and has a capacity of 128 KB.
The I/O interface of each NAND flash memory is generally eight, each data line transmits (512 + 16) bits of information each time, and eight are (512 + 16) × 8 bits, which is 512 bytes as mentioned above. However, larger capacity NAND flash memory is also increasingly using 16 I/O lines. For example, the Samsung K9K1G16U0A chip is a 64M×16bit NAND flash memory with a capacity of 1Gb and the basic data unit is (256+8). ) × 16bit, or 512 bytes.
When addressing, the NAND flash memory transfers address packets through eight I/O interface data lines, each of which carries 8-bit address information. Since the capacity of the flash chip is relatively large, a set of 8-bit addresses can only address 256 pages, which is obviously not enough. Therefore, usually one address transfer needs to be divided into several groups and takes several clock cycles. The address information of the NAND includes the column address (the initial operation address in the page), the block address, and the corresponding page address, and are respectively grouped at the time of transmission, and it takes at least three times and takes three cycles. As the capacity increases, the address information will be more and it takes more clock cycles to transmit. Therefore, an important feature of the NAND flash memory is that the larger the capacity, the longer the addressing time. Moreover, since the transfer address period is longer than other storage media, the NAND-type flash memory is less suitable for a large number of small-capacity read/write requests than other storage media.