Automatic Reballing BGA Machine
1. DH-A2 automatic machine for reballing BGA with optical alignment 2. High resolution CCD lens camera. 3. 7 inches MCGS Touch Screen (High Definition). 4. Hot air and infrared heating zones.
Automatic Optical Reballing BGA Machine
1.Application Of Automatic Optical Reballing BGA Machine
Work with all kinds of motherboards or PCBA.
Solder, reball, desoldering different kind of chips: BGA,PGA,POP,BQFP,QFN,SOT223,PLCC,TQFP,TDFN,TSOP, PBGA,CPGA,LED chip.
2.Product Features of Automatic Optical Reballing BGA Machine
3.Specification of Automatic Optical Reballing BGA Machine
4.Details of Automatic Optical Reballing BGA Machine
5.Why Choose Our Automatic Optical Reballing BGA Machine?
6.Certificate of Automatic Optical Reballing BGA Machine
UL, E-MARK, CCC, FCC, CE ROHS certificates. Meanwhile, to improve and perfect the quality system, Dinghua has passed ISO, GMP, FCCA, C-TPAT on-site audit certification.
7.Packing & Shipment of Automatic Reballing BGA Machine
8.Shipment for Automatic Optical Reballing BGA Machine
DHL/TNT/FEDEX. If you want other shipping term, please tell us. We will support you.
9. Terms of Payment
Bank transfer, Western Union, Credit Card.
Please tell us if you need other support.
10. How DH-A2 Automatic BGA IC Reballing Machine work?
11. Related knowledge
About flash chip
Manufacturing processes can affect the density of transistors and also have an impact on the timing of some operations. For example, the write stabilization and read settling times mentioned above take up a significant portion of the time in our calculations, especially when writing. If you can reduce these times, you can further improve performance. Can the 90nm manufacturing process improve performance? I am afraid the answer is no! The actual situation is that as the storage density increases, the required read and write settling time is on the rise. This trend is reflected in the examples given in the previous calculations, otherwise the performance improvement of the 4Gb chip is more obvious.
On the whole, the large-capacity NAND-type flash memory chip will have a slightly longer addressing and operation time, but as the page capacity increases, the effective transmission rate will still be larger. The large-capacity chip meets the market's capacity, cost and performance. Demand trends. Increasing the data line and increasing the frequency is the most effective way to improve performance, but because of the process and address information occupation cycle, and some fixed operation time (such as signal stabilization time), etc., they will not Bringing year-on-year performance improvements.
Among them: A0 ~ 11 address the page, can be understood as "column address".
Addressing pages by A12-29 can be understood as "row address". For convenience, "column address" and "row address" are divided into two groups of transmissions instead of directly combining them into one large group. Therefore, each group will have no data transmission in the last cycle. The unused data lines remain low. The so-called "row address" and "column address" of NAND-type flash memory are not the definitions we are familiar with in DRAM and SRAM, but a relatively convenient expression. In order to facilitate understanding, we can make a three-dimensional NAND-type flash chip architecture diagram in the vertical direction, and the concept of two-dimensional "row" and "column" in this section is relatively straightforward